Monochromatic Beam Monitoring
Fully established product, now available in different thicknesses and geometries with minimal delivery time.  Contact us for a quotations.

 SEE: WHITEPAPERS

                   

 
Product description and specifications: Devices are UHV-compatible (1E-08 mbar).  Each XBPM contains of 4 1.5x4.5 mm2 (1x2 mm2) diodes in a 2x2-array configuration with gaps between the electrodes of 6 μm (2μm) and a total covered area of 3x9 mm2. The XBPM sensor can be mounted on a 3x4 cm2 circuit board with 5 solder connectors, 1 for each quadrant and one as bias connector or in custom PCB. The circuit board comes with 4 holes for mounting, and a metal cover to avoid damage to the sensor surface during handling. The XBPM sensor can be operated at zero bias with >80% total signal collection or with a bis to up to 30 V, with dark currents below 1 nA at the operating voltage.

 


   

 

Fig.1 Left) SiC device with gen1 layout assembled on a 4x3cm2 PCB. Electrical connections for the 2x2 sensors array can be seen from front view whereas the 9x3mm2 free-standing thin membrane can be seen from back view. Right) SiC device with gen2 layout assembled on a 4x3cm2 PCB. Electrical connections for the 2x2 sensors array can be seen from front view whereas the 2mm2 free-standing thin circular membrane can be seen from back view.

Fig.2 20μm SiC wafer showing all different devices: intensity, position and profile monitors with different geometries.

Fig.3 Measuring system used at Diamond ltd to compare 1-1 single crystal diamond and SiC XBPM (presented at IBIC2021 conference, published here)